Single Crystals of Electronic Materials

Doping Laser Diamond Crystal growth Electronic structure. Luminescence Properties Alloys X-rays Germanium Gallium nitride Solar cells Dislocations Thermodynamics Defects Electrooptics Infrared imaging Silicon Semiconductors Silicon carbide Field-effect transistors Gamma rays Indium phosphide Sulfides Scintillators ALN Crystal properties Phosphor Melt growth TCO Thermodynamic Properties LEDs Ammonothermal Applications Microwave Growth methods Wafer GaN Photodetectors Semiconductor Cadmium telluride HVPE Sapphire Power consumption Single Crystal Throughput Substrate Facet Selenides A1 hot zone B2 Czochralski method Basic properties Bulk crystal Bulk crystal growth Arsenide B1 silicon Computing modeling Fe doping Czochralski Growth technologies High-performance multicrystalline silicon high-power applications Ionicity Interface instability In2O3Indium oxide Directional solidification Interface concavity gallium oxide n-type and p-type doping Mono-like Na flux Growth of artificial diamond Oxide electronics Semiinsulating RF devices Substrate requirements Sublimation growth Impurity segregation Twinning defects Tisapphire Zinc�selenide compounds Vertical gradient freeze Sandwich method Resonant PES SiC seeds SnO2SnOx Zinc�sulfide compounds Zinc telluride