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    Silicon Carbide

    Silicon Carbide

    - Materials, Processing & Devices

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    Bog
    • Format
    • Bog, hardback
    • Engelsk

    Beskrivelse

    This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.

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    Detaljer
    • SprogEngelsk
    • Sidetal416
    • Udgivelsesdato30-10-2003
    • ISBN139781591690238
    • Forlag CRC Press Inc
    • FormatHardback
    Størrelse og vægt
  • Vægt703 g
    • coffee cup img
    10 cm
    book img
    15,2 cm
    22,9 cm

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    Secondary Surface Growth Silicon carbide Mass Electric properties Be Layers Ion Spectrometry Epitaxial APDs breakdown voltage bunching CVD Layer Epitaxial Layers Doping Concentration High Implant Low Resistance Ohmic Contacts Fermi Level Pinning Ohmic Contacts PL Spectrum Impact Ionization Rates Porous Si SiC Polytype RHEED Pattern Si Faces SiC Surface Porous Layer Porous SiC SiC Interface SiC Wafer Step-flow Growth Specific Contact Resistance step-flow SiC Device Surface Diffusion Length
    Machine Name: SAXO080