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Beskrivelse
This work concentrates on scanning micro-Raman studies of nanopatterned singlelayer graphene. Graphene as a material is ideally suited for both electronics and spintronics, however for both applications nanopatterning is necessary. For graphene spintronics, pure zigzag edges are additionally required. It is therefore necessary to study the influence of nanopatterning and to verify attemps at creating pure zigzag edges. To adress the first issue, the work at hand comprises a Raman study of a series of samples of singlelayer graphene patterned with square antidot lattices. We have found this nanopatterned graphene to be p-type doped with the doping concentration tentatively depending on the number of antidots per square unit. An attempt at creating pure zigzag edges has been made via an anisotropic etching process applied to square antidot lattices on singlelayer graphene. This thesis shows a step-b-step Raman evaluation of the etching process and verifies via inter-valley scattering that it indeed results in predominantly zigzag edges.