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Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO

- Application to LSI

Forfatter: info mangler
  • Format
  • Bog, hardback
  • Engelsk

Beskrivelse

This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process. A further two books in the series will describe the fundamentals; and the specific application of CAAC-IGZO to LCD and OLED displays.

Key features:

• Outlines the physics and characteristics of CAAC-IGZO FETs that contribute to favorable operations of LSI devices.

• Explains the application of CAAC-IGZO to LSI devices, highlighting attributes including low off-state current, low power consumption, and excellent charge retention.

• Describes the NOSRAM, DOSRAM, CPU, FPGA, image sensors, and etc., referring to prototype chips fabricated by a hybrid process of CAAC-IGZO and Si FETs.

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Detaljer
  • SprogEngelsk
  • Sidetal376
  • Udgivelsesdato23-12-2016
  • ISBN139781119247340
  • Forlag John Wiley & Sons Inc
  • FormatHardback
Størrelse og vægt
  • Vægt726 g
  • Dybde2,3 cm
  • coffee cup img
    10 cm
    book img
    17,3 cm
    24,6 cm

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