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    Nitride Wide Bandgap Semiconductor Material and Electronic Devices

    Nitride Wide Bandgap Semiconductor Material and Electronic Devices

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    Bog E-bog
    • Format
    • Bog, hardback
    • Engelsk

    Beskrivelse

    This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

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    Detaljer
    • SprogEngelsk
    • Sidetal392
    • Udgivelsesdato03-10-2016
    • ISBN139781498745123
    • Forlag CRC Press Inc
    • FormatHardback
    Størrelse og vægt
  • Vægt884 g
    • coffee cup img
    10 cm
    book img
    17,8 cm
    25,4 cm

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    Electronic devices High Electron Mobility Transistors HEMT GaN HEMT 2DEG Density AlGaN Barrier AlGaN Barrier Layer AlN Nucleation Layer Alloy Disorder Scattering AlN Interlayer breakdown voltage Dislocation Density GaN Heterostructure GaN Template GaN Buffer Layer GaN Channel IFR Scattering Ill-nitride Fluorine Plasma GaN Cap Layer GaN Film GaN Epilayer GaN HEMTs Nucleation Layer semiconductor material Room Temperature Band Gap Reciprocal Space Mapping wide band gap Sapphire Substrate Vicinal Substrates
    Machine Name: SAXO081