Mismatch Theory and Measurement for Semiconductors

THE MOST ADVANCED SEMICONDUCTOR MISMATCH TECHNIQUES These mismatch methods are the most advanced techniques in the Semiconductor field. All the practical matters of simulation, measurement, and mismatch model parameter generation (using random field theory) including multi-device co-correlation are handled in an accurate, practical, and comprehensive manner. This represents a true advance and technical progress in the matter of semiconductor mismatch simulation and measurement. If you're involved in any way with mismatch of semiconductor devices you've got to get this book. If not for yourself then for the modelers that create your semiconductor models for you. TABLE OF CONTENTS SUMMARY PART I. DEVICE MISMATCH SIMULATION OVERVIEW - How To Perform Monte-Carlo And Mismatch Simulation - Parameters and Statistics Model Files - Process & Mismatch Variation - Mismatch vs Area - Mismatch vs Distance and Other Effects (Mismatch Factor) - Effective Mismatch Factor PART II. MISMATCH MEASUREMENT TECHNIQUES Resistors, Diodes, Mosfets, Bipolar Transistors, JFETs Monte-Carlo Analysis of Correlated Variables Differential Mismatch Measurement Features: - Far superior accuracy compared to past traditional methods. - Differential method: Both devices are biased simultaneously, greatly reducing common mode noise and device thermal difference errors. - Differential method avoids the errors of subtracting two large error prone, poor resolution measurements. - Swapping of internal differential precision range resistors cancels internal instrumentation system errors resulting in even greater accuracy. PART III. APPLYING RANDOM FIELD THEORY TO MISMATCH - Random Field Theory ("Space" Series in More Than 1 Dimension) - Random Field Correlation Function In 2 Dimensions (Our Semiconductor Case) - How To Deal With Parametric Trends (Wafer Gradients) - Simulating Correlated Devices In Two Dimensions (Using the Multivariate Normal Conditional Probability Density)