High Speed Semiconductor Physics. Theoretical Approaches and Device Physics

Solid state physics is a fascinating sub-genre of condensed matter physics - though some graduate students consider it a very boring and tedious subject area in Physics and others even call it a 'squalid state'. Topics covered in this book are built on standard solid state physics references available in most online libraries or in other books on solid state physics. The complexity of high speed semiconductor physics and related devices arose from condensed solid state matter. The content covered in this book gives a deep coverage on some topics or sections that may be covered only superficially in other literature. Therefore, these topics are likely to differ a great deal from what is deemed important elsewhere in other books or available literature. There are many extremely good books on solid-state physics and condensed matter physics but very few of these books are restricted to high speed semiconductor physic though. Chapter one covers the general semiconductor qualities that make high speed semiconductor devices effect and includes the theory of crystals, diffusion and ist mechanisms, while chapter two covers solid state materials, material processing for high speed semiconductor devices and an introduction to quantum theory for materials in relation to density of states of the radiation for a black body and ist radiation properties. Chapter three discuss high speed semiconductor energy band theory, energy bands in general solid semiconductor materials, the Debye model, the Einstein model the Debye model and semiconductor transport carriers in 3D semiconductors while chapter four discuss effect of external force on current flow based on the concept of holes valence band, and lattice scattering in high speed devices. Chapter five briefly describes solid state thermoelectric fundamentals, thermoelectric material and thermoelectric theory of solids in lattice and phonons while chapter six scattering in high field effect in semiconductors in inter-valley electron scattering and the associated Fermi Dirac statistics and Maxwell-Boltzmann approximation on their carrier concentration variation with energy in extrinsic doping chapter seven covers p-n junction diodes, varactor diode, pin diode Schottky diode and their transient response of diode in multi-valley semiconductors. Chapter eight discusses high speed metal semiconductor field effect transistors.