Over 10 mio. titler Fri fragt ved køb over 499,- Hurtig levering 30 dages retur
Sidst søgt på
    Studiebog
    Handbook of Silicon Carbide Materials and Devices

    Handbook of Silicon Carbide Materials and Devices

    Forfatter: info mangler
    Bog
    • Format
    • Bog, hardback
    • Engelsk

    Beskrivelse

    This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field.

    The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction.

    This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.

    Læs hele beskrivelsen
    Detaljer
    • SprogEngelsk
    • Sidetal444
    • Udgivelsesdato31-05-2023
    • ISBN139780367188269
    • Forlag Crc Press
    • FormatHardback
    Størrelse og vægt
  • Vægt1016 g
    • coffee cup img
    10 cm
    book img
    17,8 cm
    25,4 cm

    Findes i disse kategorier...

    Se andre, der handler om...

    Silicon carbide Vapor-liquid-solid Growth Epitaxial graphene 4H-SiC CVD Techniques Mm IOP Raman scattering Radiation detectors Raman Imaging Spectroscopic SIC 3C SiC Layer 3C-SiC/Si 4H-SiC UV photodiodes CVD Technique cubic SiC CVD principles Homoepitaxy include presolar SiC history Epitaxial Layer EPR Spectrum MOS Interface Mueller matrix ellipsometry near-infrared luminescent Raman Microscopy RBS Experiment presolar Reststrahlen Band SiC Polytype Raman Spectrum SiC Material SiC Layer synchrotron X-ray diffraction SiC Crystal SiC materials Silicon Carbide Semiconductor VLS Process SiC thermal oxidation SiC Wafer UV photodetector Secondary Ion Mass Spectroscopy SAED Pattern short wavelength SiC CVD SiC Film SiC Substrate
    Machine Name: SAXO081