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Advances in Chemical Mechanical Planarization (CMP)

Forfatter: info mangler
  • Format
  • Bog, hardback
  • Engelsk

Beskrivelse

Advances in Chemical Mechanical Planarization (CMP) provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The technology has grown to encompass the removal and planarization of multiple metal and dielectric materials and layers both at the device and the metallization levels, using different tools and parameters, requiring improvements in the control of topography and defects. This important book offers a systematic review of fundamentals and advances in the area. Part One covers CMP of dielectric and metal films, with chapters focusing on the use of particular techniques and processes, and on CMP of particular various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. Part Two addresses consumables and process control for improved CMP, and includes chapters on the preparation and characterization of slurry, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes, and approaches for defection characterization, mitigation, and reduction.

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Detaljer
  • SprogEngelsk
  • Sidetal536
  • Udgivelsesdato19-01-2016
  • ISBN139780081001653
  • Forlag Woodhead Publishing Ltd
  • FormatHardback
Størrelse og vægt
  • Vægt690 g
  • coffee cup img
    10 cm
    book img
    15,2 cm
    22,9 cm

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    Ge Environmental Infrared spectroscopy Oxidation Reliability Porosity Polish Modeling Impedance spectroscopy Defects Viscosity Silica Corrosion Solubility Silicon carbide Transition metal compounds Chemical mechanical planarization Conditioning Conductivity Density Metrology Membranes PH EHS Modeling and Simulation Alumina MPS Semiconductor Manufacturing Dressing GST Nanopore Silylation InGaAs Selectivity LPC Attenuated Total Reflection Semiconductor Fabrication Wastewater Colloidal chemistry Interconnects Material Removal Amorphous Chemical Mechanical Polishing Ionic strength PSD Keyword ATR Titration Devices SiGe FTIR CMP Slurries Catalytic Ceria 22nm CMOS technology node Air-gap interconnects Abrasive-free Anodic Dissolution Cobalt liners Copper conductor resistivity CMP removal rate uniformity CMP slurry Copper CMP Corrosion current Dissolution inhibitor cupric Cathodeluminescence (CL)Chemical mechanical polishing (CMP)Gallium nitride (GaN)Subsurface damage Diffusion barrier CMP Chemical mechanical planarization (CMP)Slurry consumption ECMP Dendrite defects Die-level uniformity Fabrication of insulated-gate bipolar transistors (IGBT)Fabrication of power MOS transistors Corrosion Potential High mobility III-V Hardmask Hollow Metal Diamond disc conditioner Hydroxyl Radicals INP Mixed potential Foreign materials Feature-level evolution Micro-structured single reflection element mSRE Nanoparticle behavior Preferential removal Preston's law Polish residues permanganate planarization Replacement fin Silica dispersions Interlevel dielectrics (ILD)Oxide CMP Slurry characterization Slurry components Slurry health Rotary table method Slurry injection system (SIS)Slurry reduction Surface oxidation Rinse chemistry SRB Surface profile Single crystalline Surface passivation WIW (within wafer)WTW (wafer to wafer)WID (within die)XPS Manufacturing of microelectromechanical systems (MEMS)Polishing for bondable surfaces Oxide polish Organosilane Polarization resistance Post cleaning Scratches Ultra low-k dielectrics (ULK)Unit operations Ruthenium and ruthenium alloy liners Surface complex UV-assisted CMP
    Machine Name: SAXO082